国家/地区 韩国（18） 美国（11） 中国（3） 欧洲专利局（EPO）（2） 日本（2）
IPC部 C（18） H（12） B（10）
IPC大类 C01（18） H01（12） B82（8）
C23（5） B01（4） C08（3）
C09（2） C25（2）
IPC小类 C01B（18） B82Y（7） H01B（7）
H01L（6） C23C（5） B01J（3）
C08G（3） H01M（3） C08K（2）
C25D（2）
IPC C01B031/02（18）
发明人 LEE J H（18）
公开年 2011（5） 2014（5） 2012（4） 2013（3）
申请年 2010（5）  2013（5）  2011（4）  2012（4） 
专利权人 SAMSUNG ELEC.（9） LEE J H（5） KWAN W L（4） LEE B H（4）
REYUN K L（4） UNIV SUNGKYU.（3） UNIV SUNGKYU.（3） KOREA INST S.（2）
LEE J（2）

Manufacture of single crystal graphene film involves melting catalyst layer on substrate, cooling molten catalyst, forming catalyst region, and expanding catalyst region to expand cooling area of catalyst layer.

HAN I T, KIM H J, KIM S G, KIM Y C, LEE J H, YOO J B

Manufacture of graphene for fabricating electronic device and display device, involves forming silicon carbide thin film on substrate, forming metal thin film on silicon carbide thin film, and heating to obtain metal composite layer.

LEE D W, SHIN H, PARK S, BYUN K, SEO D, SONG H, WOO Y, LEE J, CHUNG H, HEO J, SHIN H J, PARK S J, BYUN K E, SONG H J, WOO Y S, LEE J H, CHUNG H J, HEO J S

Preparing polyimide-graphene composite material involves modifying graphene by covalently bonding amine-substituted aromatic/aliphatic compound on graphene surface, adding modified graphene to polyimide precursor to polymerize, and heating.

YOU N H, PARK O, KU B, LEE J H, GOH M, PARK O K, KU B C

Manufacturing method of graphene device e.g. FET , nanogap device, graphene sensor involves etching protection layer until residual layer made of material for forming protection layer remains on active area of graphene layer.

LEE J, JEON T, KIM Y, LEE C, JUNG Y, LEE J H, JEON T H, KIM Y S, LEE C S, JUNG Y S

Method for manufacturing graphene structure using carbon black, involves heat treating graphite painted candles, graphite painted candles are mixed with carbon black and carbon black is mixed with wet duster.

LEE J H, LEE B H, KWAN W L, REYUN K L

Apparatus for manufacturing device used for preparing graphene for electronic circuit, comprises graphene structure including metal catalyst layer formed on substrate, protection layer, and graphene layer, and power unit.

LEE J, JUNG Y, KIM Y, LEE C, MOON C, LEE J H, JUNG Y S, KIM Y S, LEE C S, MOON C Y, MUN Z R

Preparing a soluble graphene solution used in a petroleum refining process, by forming carbon oxide fiber by oxidizing carbon fiber, mixing carbon oxide fiber with polymer and polar solvent, and adding a reducing agent to mixed solution.

LEE J H, IN I S, LEE M Y, MIN B G, PARK S Y

Making graphene semiconductor device/diode used in organic light emitting display, comprises forming transfer substrate on semiconductor layer, forming laminates to separate sacrificial substrate from layer, and removing transfer substrate.

LEE C S, KIM Y B, YUN Y J, KIM Y S, SEO D, LEE J H, KIM Y, LEE J, LEE C

Graphene dot structure to form network, useful to form electrode or conductive layer in lithium ion battery or hydrogen storage apparatus comprises core of semiconductor material, and shell of graphene formed on surface of core.

LEE E, CHOI B, LEE J, WHANG D, CHOI B L, LEE E K, LEE J H, WHANG D M

Graphene light-emitting device e.g. LED comprises a p-type graphene doped with a p-type dopant, an n-type graphene doped with an n-type dopant, and an active graphene that is disposed between the p-type graphene and the n-type graphene.

HWANG S, KO G, SIM S, CHUNG H, SEONG H, SONE C, LEE J, KO H, CHOI S, KIM S, SUN W W, GUAN Y K, SUN H S, CHUNG H J, HAN K S, CHEOLSOO S, LEE Z H, HUYNH D K, HWANG S W, KO G W, SIM S H, SEONG H K, SONE C S, LEE J H, KO H D, CHOI S H, SHIM S, KO K, JEONG H, GO J, SON C